"Czochralski" meaning in English

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  "etymology_text": "From Polish Czochralski, a surname. Named after the inventor of the process, Jan Czochralski (1885–1953), Polish chemist.",
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          "name": "Manufacturing",
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          "ref": "1999, Reinhard Krause-Rehberg, Hartmut S. Leipner, “Basics of Positron Annihilation in Semiconductors”, in Positron Annihilation in Semiconductors: Defect Studies (Springer Series in Solid-State Sciences; 127), Berlin: Springer, →ISBN, →ISSN, page 104:",
          "text": "Mascher et al. (1989b) presented a correlated investigation of electron-irradiation-induced divacancies in silicon by positron annihilation, electron paramagnetic resonance (EPR), and infrared absorption. The defects were created by 2-MeV irradiation of Czochralski-grown Si at room temperature to a dose of 1×10¹⁸ cm⁻².",
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          "ref": "2011, Basant Agrawal, G. N. Tiwari, “Life Cycle Energy Analysis”, in Building Integrated Photovoltaic Thermal Systems: For Sustainable Developments (RSC Energy Series; 4), Cambridge: RSC Publishing, →ISBN, →ISSN, page 284:",
          "text": "The energy required to produce electronic grade silicon (EG-Si) from MG-Si is 100 kWh kg⁻¹ and there is a 90% yield. The EG-Si is melted in a Czochralski crystal puller at 1400 °C and the silicon slowly crystallizes to form a single crystal ingot of silicon.",
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        "Short for Czochralski process."
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        "(attributive, inorganic chemistry) Short for Czochralski process."
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          "word": "Czochralski process"
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          "word": "Czochralski method"
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          "word": "Czochralski technique"
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          "word": "Cz"
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          "text": "Mascher et al. (1989b) presented a correlated investigation of electron-irradiation-induced divacancies in silicon by positron annihilation, electron paramagnetic resonance (EPR), and infrared absorption. The defects were created by 2-MeV irradiation of Czochralski-grown Si at room temperature to a dose of 1×10¹⁸ cm⁻².",
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          "ref": "2011, Basant Agrawal, G. N. Tiwari, “Life Cycle Energy Analysis”, in Building Integrated Photovoltaic Thermal Systems: For Sustainable Developments (RSC Energy Series; 4), Cambridge: RSC Publishing, →ISBN, →ISSN, page 284:",
          "text": "The energy required to produce electronic grade silicon (EG-Si) from MG-Si is 100 kWh kg⁻¹ and there is a 90% yield. The EG-Si is melted in a Czochralski crystal puller at 1400 °C and the silicon slowly crystallizes to form a single crystal ingot of silicon.",
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