"pMOSFET" meaning in English

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        "2": "p",
        "3": "MOSFET"
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      "expansion": "p + MOSFET",
      "name": "compound"
    }
  ],
  "etymology_text": "p + MOSFET, where n denotes \"positive\" or \"p-type\".",
  "forms": [
    {
      "form": "pMOSFETs",
      "tags": [
        "plural"
      ]
    }
  ],
  "head_templates": [
    {
      "args": {},
      "expansion": "pMOSFET (plural pMOSFETs)",
      "name": "en-noun"
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  "lang": "English",
  "lang_code": "en",
  "pos": "noun",
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          "name": "Electronics",
          "orig": "en:Electronics",
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        {
          "kind": "other",
          "langcode": "en",
          "name": "Semiconductors",
          "orig": "en:Semiconductors",
          "parents": [],
          "source": "w"
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      ],
      "examples": [
        {
          "ref": "1990 March, Katsushi Asahina, Shuji Murakami, Katsuki Ichinose, Fuyumi Minami, Yasuhiro Funakoshi, “A 256-K 13-Nanosecond CMOS SRAM”, in Electronics & Communications in Japan, Part 2: Electronics, volume 73, number 3, pages 44-45:",
          "text": "As shown in Fig. 2, the source-drain breakdown characteristics of PMOSFETS exhibit an increase in the drain current under the same drain voltage as the gate length increases.",
          "type": "quote"
        },
        {
          "ref": "2025 April, A. Tahiat, B. Cretu, A. Veloso, E. Simoen, “Investigation of DC and low frequency noise parameters of junctionless GAA Si VNW pMOSFETs in the temperature range from 80 K to 340 K”, in Solid-State Electronics, volume 225, page 1:",
          "text": "In this article, the performance of vertical nanowire Gate All Around (GAA) junction-less pMOSFETs on SOI having an asymmetric architecture was investigated experimentally based on an in-depth study of their electrical characteristics.",
          "type": "quote"
        }
      ],
      "glosses": [
        "A type of metal–oxide–semiconductor field-effect transistor (MOSFET) that utilizes an p-type channel, conducting when a voltage voltage below a threshold is applied to the gate relative to the source. It is commonly used in complementary metal–oxide–semiconductor (CMOS) technology alongside nMOSFETs."
      ],
      "id": "en-pMOSFET-en-noun-Op6MJXKV",
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          "electronics",
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      "qualifier": "semiconductors",
      "raw_glosses": [
        "(electronics, semiconductors) A type of metal–oxide–semiconductor field-effect transistor (MOSFET) that utilizes an p-type channel, conducting when a voltage voltage below a threshold is applied to the gate relative to the source. It is commonly used in complementary metal–oxide–semiconductor (CMOS) technology alongside nMOSFETs."
      ],
      "related": [
        {
          "word": "nMOSFET"
        }
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        "business",
        "electrical-engineering",
        "electricity",
        "electromagnetism",
        "electronics",
        "energy",
        "engineering",
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        "physical-sciences",
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      "wikipedia": [
        "CMOS#Inversion"
      ]
    }
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  "sounds": [
    {
      "ipa": "/ˈpiːˌɛmˌoʊˌɛsˌɛfˌiːˌtiː/"
    }
  ],
  "word": "pMOSFET"
}

{
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        "2": "p",
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      "expansion": "p + MOSFET",
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    }
  ],
  "etymology_text": "p + MOSFET, where n denotes \"positive\" or \"p-type\".",
  "forms": [
    {
      "form": "pMOSFETs",
      "tags": [
        "plural"
      ]
    }
  ],
  "head_templates": [
    {
      "args": {},
      "expansion": "pMOSFET (plural pMOSFETs)",
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  "lang": "English",
  "lang_code": "en",
  "pos": "noun",
  "related": [
    {
      "word": "nMOSFET"
    }
  ],
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        "en:Electronics",
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      "examples": [
        {
          "ref": "1990 March, Katsushi Asahina, Shuji Murakami, Katsuki Ichinose, Fuyumi Minami, Yasuhiro Funakoshi, “A 256-K 13-Nanosecond CMOS SRAM”, in Electronics & Communications in Japan, Part 2: Electronics, volume 73, number 3, pages 44-45:",
          "text": "As shown in Fig. 2, the source-drain breakdown characteristics of PMOSFETS exhibit an increase in the drain current under the same drain voltage as the gate length increases.",
          "type": "quote"
        },
        {
          "ref": "2025 April, A. Tahiat, B. Cretu, A. Veloso, E. Simoen, “Investigation of DC and low frequency noise parameters of junctionless GAA Si VNW pMOSFETs in the temperature range from 80 K to 340 K”, in Solid-State Electronics, volume 225, page 1:",
          "text": "In this article, the performance of vertical nanowire Gate All Around (GAA) junction-less pMOSFETs on SOI having an asymmetric architecture was investigated experimentally based on an in-depth study of their electrical characteristics.",
          "type": "quote"
        }
      ],
      "glosses": [
        "A type of metal–oxide–semiconductor field-effect transistor (MOSFET) that utilizes an p-type channel, conducting when a voltage voltage below a threshold is applied to the gate relative to the source. It is commonly used in complementary metal–oxide–semiconductor (CMOS) technology alongside nMOSFETs."
      ],
      "links": [
        [
          "electronics",
          "electronics"
        ],
        [
          "semiconductor",
          "semiconductor"
        ]
      ],
      "qualifier": "semiconductors",
      "raw_glosses": [
        "(electronics, semiconductors) A type of metal–oxide–semiconductor field-effect transistor (MOSFET) that utilizes an p-type channel, conducting when a voltage voltage below a threshold is applied to the gate relative to the source. It is commonly used in complementary metal–oxide–semiconductor (CMOS) technology alongside nMOSFETs."
      ],
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        "physical-sciences",
        "physics"
      ],
      "wikipedia": [
        "CMOS#Inversion"
      ]
    }
  ],
  "sounds": [
    {
      "ipa": "/ˈpiːˌɛmˌoʊˌɛsˌɛfˌiːˌtiː/"
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  "word": "pMOSFET"
}