"epitaxial" meaning in English

{
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        "1": "en",
        "2": "epitaxy",
        "3": "al"
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      "expansion": "epitaxy + -al",
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    }
  ],
  "etymology_text": "epitaxy + -al",
  "head_templates": [
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      "args": {
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      "expansion": "epitaxial (not comparable)",
      "name": "en-adj"
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  "lang": "English",
  "lang_code": "en",
  "pos": "adj",
  "senses": [
    {
      "categories": [
        {
          "kind": "other",
          "name": "English entries with incorrect language header",
          "parents": [
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          "source": "w"
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          "name": "English terms suffixed with -al",
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      ],
      "derived": [
        {
          "word": "epitaxial layer"
        }
      ],
      "examples": [
        {
          "ref": "1994, D. M. Lee, D. Ruprecht, D. Hymes, W. Huber, “Surface Characterization of Heat Treated Silicon Wafers”, in H[oward] R. Huff, W. Bergholz, K[ōji] Sumino, editors, Semiconductor Silicon/1994: Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology (Electronics Division Proceedings; 94-10), The Electrochemical Society, page 241",
          "text": "It should be noted that a high temperature anneal in Ar, H₂, or high vacuum is a well established pre-epitaxial growth step by which a native oxide film is removed to obtain a good quality epitaxial layer[…].",
          "type": "quotation"
        }
      ],
      "glosses": [
        "Of, pertaining to, or employing epitaxy"
      ],
      "id": "en-epitaxial-en-adj-RgecVavF",
      "links": [
        [
          "epitaxy",
          "epitaxy"
        ]
      ],
      "tags": [
        "not-comparable"
      ],
      "translations": [
        {
          "code": "it",
          "lang": "Italian",
          "sense": "Translations",
          "word": "epitassiale"
        }
      ]
    }
  ],
  "word": "epitaxial"
}

{
  "derived": [
    {
      "word": "epitaxial layer"
    }
  ],
  "etymology_templates": [
    {
      "args": {
        "1": "en",
        "2": "epitaxy",
        "3": "al"
      },
      "expansion": "epitaxy + -al",
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    }
  ],
  "etymology_text": "epitaxy + -al",
  "head_templates": [
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      "args": {
        "1": "-"
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      "expansion": "epitaxial (not comparable)",
      "name": "en-adj"
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  "lang": "English",
  "lang_code": "en",
  "pos": "adj",
  "senses": [
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        "English uncomparable adjectives",
        "Translation table header lacks gloss"
      ],
      "examples": [
        {
          "ref": "1994, D. M. Lee, D. Ruprecht, D. Hymes, W. Huber, “Surface Characterization of Heat Treated Silicon Wafers”, in H[oward] R. Huff, W. Bergholz, K[ōji] Sumino, editors, Semiconductor Silicon/1994: Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology (Electronics Division Proceedings; 94-10), The Electrochemical Society, page 241",
          "text": "It should be noted that a high temperature anneal in Ar, H₂, or high vacuum is a well established pre-epitaxial growth step by which a native oxide film is removed to obtain a good quality epitaxial layer[…].",
          "type": "quotation"
        }
      ],
      "glosses": [
        "Of, pertaining to, or employing epitaxy"
      ],
      "links": [
        [
          "epitaxy",
          "epitaxy"
        ]
      ],
      "tags": [
        "not-comparable"
      ]
    }
  ],
  "translations": [
    {
      "code": "it",
      "lang": "Italian",
      "sense": "Translations",
      "word": "epitassiale"
    }
  ],
  "word": "epitaxial"
}