"epitaxial layer" meaning in English

{
  "forms": [
    {
      "form": "epitaxial layers",
      "tags": [
        "plural"
      ]
    }
  ],
  "head_templates": [
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      "args": {},
      "expansion": "epitaxial layer (plural epitaxial layers)",
      "name": "en-noun"
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  "lang": "English",
  "lang_code": "en",
  "pos": "noun",
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          "kind": "other",
          "name": "English entries with incorrect language header",
          "parents": [
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          "source": "w"
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      "examples": [
        {
          "ref": "1994, D. M. Lee, D. Ruprecht, D. Hymes, W. Huber, “Surface Characterization of Heat Treated Silicon Wafers”, in H[oward] R. Huff, W. Bergholz, K[ōji] Sumino, editors, Semiconductor Silicon/1994: Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology (Electronics Division Proceedings; 94-10), The Electrochemical Society, page 241",
          "text": "It should be noted that a high temperature anneal in Ar, H₂, or high vacuum is a well established pre-epitaxial growth step by which a native oxide film is removed to obtain a good quality epitaxial layer[…].",
          "type": "quotation"
        }
      ],
      "glosses": [
        "In semiconductor fabrication: a single crystal layer formed on top of a single crystal substrate."
      ],
      "id": "en-epitaxial_layer-en-noun-nOxBSKD5",
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          "semiconductor",
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        ],
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          "crystal",
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        ],
        [
          "layer",
          "layer"
        ],
        [
          "substrate",
          "substrate"
        ]
      ]
    }
  ],
  "word": "epitaxial layer"
}

{
  "forms": [
    {
      "form": "epitaxial layers",
      "tags": [
        "plural"
      ]
    }
  ],
  "head_templates": [
    {
      "args": {},
      "expansion": "epitaxial layer (plural epitaxial layers)",
      "name": "en-noun"
    }
  ],
  "lang": "English",
  "lang_code": "en",
  "pos": "noun",
  "senses": [
    {
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      "examples": [
        {
          "ref": "1994, D. M. Lee, D. Ruprecht, D. Hymes, W. Huber, “Surface Characterization of Heat Treated Silicon Wafers”, in H[oward] R. Huff, W. Bergholz, K[ōji] Sumino, editors, Semiconductor Silicon/1994: Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology (Electronics Division Proceedings; 94-10), The Electrochemical Society, page 241",
          "text": "It should be noted that a high temperature anneal in Ar, H₂, or high vacuum is a well established pre-epitaxial growth step by which a native oxide film is removed to obtain a good quality epitaxial layer[…].",
          "type": "quotation"
        }
      ],
      "glosses": [
        "In semiconductor fabrication: a single crystal layer formed on top of a single crystal substrate."
      ],
      "links": [
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          "semiconductor",
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          "layer",
          "layer"
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        [
          "substrate",
          "substrate"
        ]
      ]
    }
  ],
  "word": "epitaxial layer"
}