"Czochralski" meaning in All languages combined

{
  "categories": [
    {
      "kind": "other",
      "name": "有2個詞條的頁面",
      "parents": [],
      "source": "w"
    },
    {
      "kind": "other",
      "name": "派生自波蘭語的英語詞",
      "parents": [],
      "source": "w"
    },
    {
      "kind": "other",
      "name": "源自波蘭語的英語借詞",
      "parents": [],
      "source": "w"
    },
    {
      "kind": "other",
      "name": "英語不可數名詞",
      "parents": [],
      "source": "w"
    },
    {
      "kind": "other",
      "name": "英語名祖",
      "parents": [],
      "source": "w"
    },
    {
      "kind": "other",
      "name": "英語名詞",
      "parents": [],
      "source": "w"
    },
    {
      "kind": "other",
      "name": "英語詞元",
      "parents": [],
      "source": "w"
    }
  ],
  "etymology_text": "借自波蘭語 Czochralski，為一姓氏，以發明這一方法的波蘭化學家 Jan Czochralski (1885–1953) 命名。",
  "lang": "英語",
  "lang_code": "en",
  "pos": "noun",
  "related": [
    {
      "word": "Czochralski process"
    },
    {
      "word": "Czochralski method"
    },
    {
      "word": "Czochralski technique"
    }
  ],
  "senses": [
    {
      "categories": [
        {
          "kind": "other",
          "name": "有引文的英語詞",
          "parents": [],
          "source": "w"
        },
        {
          "kind": "other",
          "name": "英語 化學",
          "parents": [],
          "source": "w"
        },
        {
          "kind": "other",
          "name": "英語引文翻譯請求",
          "parents": [],
          "source": "w"
        },
        {
          "kind": "other",
          "name": "英語簡稱",
          "parents": [],
          "source": "w"
        }
      ],
      "examples": [
        {
          "ref": "1999, Reinhard Krause-Rehberg, Hartmut S. Leipner, “Basics of Positron Annihilation in Semiconductors”, 出自 Positron Annihilation in Semiconductors: Defect Studies (Springer Series in Solid-State Sciences; 127), Berlin: Springer, →ISBN, →ISSN，頁號 104:",
          "text": "Mascher et al. (1989b) presented a correlated investigation of electron-irradiation-induced divacancies in silicon by positron annihilation, electron paramagnetic resonance (EPR), and infrared absorption. The defects were created by 2-MeV irradiation of Czochralski-grown Si at room temperature to a dose of 1×10¹⁸ cm⁻²."
        },
        {
          "ref": "2011, Basant Agrawal, G. N. Tiwari, “Life Cycle Energy Analysis”, 出自 Building Integrated Photovoltaic Thermal Systems: For Sustainable Developments (RSC Energy Series; 4), Cambridge: RSC Publishing, →ISBN, →ISSN，頁號 284:",
          "text": "The energy required to produce electronic grade silicon (EG-Si) from MG-Si is 100 kWh kg⁻¹ and there is a 90% yield. The EG-Si is melted in a Czochralski crystal puller at 1400 °C and the silicon slowly crystallizes to form a single crystal ingot of silicon."
        }
      ],
      "form_of": [
        {
          "word": "Czochralski process"
        }
      ],
      "glosses": [
        "Czochralski process之簡寫。"
      ],
      "id": "zh-Czochralski-en-noun-wsztPU~7",
      "tags": [
        "attributive",
        "form-of"
      ],
      "topics": [
        "chemistry"
      ]
    }
  ],
  "sounds": [
    {
      "ipa": "/t͡ʃoʊˈkɹɑlski/",
      "raw_tags": [
        "美國"
      ]
    },
    {
      "ipa": "/t͡ʃəˈkɹælski/",
      "raw_tags": [
        "英國"
      ]
    },
    {
      "ipa": "/t͡ʃɒxˈɹælski/",
      "raw_tags": [
        "英國"
      ]
    }
  ],
  "synonyms": [
    {
      "word": "Cz"
    },
    {
      "word": "CZ"
    }
  ],
  "tags": [
    "uncountable"
  ],
  "word": "Czochralski"
}

{
  "categories": [
    {
      "kind": "other",
      "name": "有2個詞條的頁面",
      "parents": [],
      "source": "w"
    },
    {
      "kind": "other",
      "name": "波蘭語專有名詞",
      "parents": [],
      "source": "w"
    },
    {
      "kind": "other",
      "name": "波蘭語詞元",
      "parents": [],
      "source": "w"
    }
  ],
  "forms": [
    {
      "form": "Czochralska",
      "raw_tags": [
        "陰性形式"
      ]
    }
  ],
  "lang": "波蘭語",
  "lang_code": "pl",
  "pos": "name",
  "raw_tags": [
    "個人"
  ],
  "senses": [
    {
      "categories": [
        {
          "kind": "other",
          "name": "波蘭語姓氏",
          "parents": [],
          "source": "w"
        },
        {
          "kind": "other",
          "name": "波蘭語男性姓氏",
          "parents": [],
          "source": "w"
        }
      ],
      "glosses": [
        "男性姓氏"
      ],
      "id": "zh-Czochralski-pl-name-wFMgi5g-"
    }
  ],
  "tags": [
    "masculine"
  ],
  "word": "Czochralski"
}

{
  "categories": [
    "有2個詞條的頁面",
    "波蘭語專有名詞",
    "波蘭語詞元"
  ],
  "forms": [
    {
      "form": "Czochralska",
      "raw_tags": [
        "陰性形式"
      ]
    }
  ],
  "lang": "波蘭語",
  "lang_code": "pl",
  "pos": "name",
  "raw_tags": [
    "個人"
  ],
  "senses": [
    {
      "categories": [
        "波蘭語姓氏",
        "波蘭語男性姓氏"
      ],
      "glosses": [
        "男性姓氏"
      ]
    }
  ],
  "tags": [
    "masculine"
  ],
  "word": "Czochralski"
}

{
  "categories": [
    "有2個詞條的頁面",
    "派生自波蘭語的英語詞",
    "源自波蘭語的英語借詞",
    "英語不可數名詞",
    "英語名祖",
    "英語名詞",
    "英語詞元"
  ],
  "etymology_text": "借自波蘭語 Czochralski，為一姓氏，以發明這一方法的波蘭化學家 Jan Czochralski (1885–1953) 命名。",
  "lang": "英語",
  "lang_code": "en",
  "pos": "noun",
  "related": [
    {
      "word": "Czochralski process"
    },
    {
      "word": "Czochralski method"
    },
    {
      "word": "Czochralski technique"
    }
  ],
  "senses": [
    {
      "categories": [
        "有引文的英語詞",
        "英語 化學",
        "英語引文翻譯請求",
        "英語簡稱"
      ],
      "examples": [
        {
          "ref": "1999, Reinhard Krause-Rehberg, Hartmut S. Leipner, “Basics of Positron Annihilation in Semiconductors”, 出自 Positron Annihilation in Semiconductors: Defect Studies (Springer Series in Solid-State Sciences; 127), Berlin: Springer, →ISBN, →ISSN，頁號 104:",
          "text": "Mascher et al. (1989b) presented a correlated investigation of electron-irradiation-induced divacancies in silicon by positron annihilation, electron paramagnetic resonance (EPR), and infrared absorption. The defects were created by 2-MeV irradiation of Czochralski-grown Si at room temperature to a dose of 1×10¹⁸ cm⁻²."
        },
        {
          "ref": "2011, Basant Agrawal, G. N. Tiwari, “Life Cycle Energy Analysis”, 出自 Building Integrated Photovoltaic Thermal Systems: For Sustainable Developments (RSC Energy Series; 4), Cambridge: RSC Publishing, →ISBN, →ISSN，頁號 284:",
          "text": "The energy required to produce electronic grade silicon (EG-Si) from MG-Si is 100 kWh kg⁻¹ and there is a 90% yield. The EG-Si is melted in a Czochralski crystal puller at 1400 °C and the silicon slowly crystallizes to form a single crystal ingot of silicon."
        }
      ],
      "form_of": [
        {
          "word": "Czochralski process"
        }
      ],
      "glosses": [
        "Czochralski process之簡寫。"
      ],
      "tags": [
        "attributive",
        "form-of"
      ],
      "topics": [
        "chemistry"
      ]
    }
  ],
  "sounds": [
    {
      "ipa": "/t͡ʃoʊˈkɹɑlski/",
      "raw_tags": [
        "美國"
      ]
    },
    {
      "ipa": "/t͡ʃəˈkɹælski/",
      "raw_tags": [
        "英國"
      ]
    },
    {
      "ipa": "/t͡ʃɒxˈɹælski/",
      "raw_tags": [
        "英國"
      ]
    }
  ],
  "synonyms": [
    {
      "word": "Cz"
    },
    {
      "word": "CZ"
    }
  ],
  "tags": [
    "uncountable"
  ],
  "word": "Czochralski"
}