"yoctoampere" meaning in English

{
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        "2": "yocto",
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      "expansion": "yocto- + ampere",
      "name": "prefix"
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  ],
  "etymology_text": "yocto- + ampere",
  "forms": [
    {
      "form": "yoctoamperes",
      "tags": [
        "plural"
      ]
    }
  ],
  "head_templates": [
    {
      "args": {},
      "expansion": "yoctoampere (plural yoctoamperes)",
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  "lang": "English",
  "lang_code": "en",
  "pos": "noun",
  "senses": [
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          "kind": "other",
          "name": "English entries with incorrect language header",
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          "source": "w"
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          "name": "English terms prefixed with yocto-",
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          "langcode": "en",
          "name": "Metrology",
          "orig": "en:Metrology",
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      ],
      "examples": [
        {
          "ref": "2012, Masakazu Murakami, Kiyoshi Kato, Ko Inada, Takanori Matsuzaki, Yasuyuki Takahashi, Shunpei Yamazaki, “Theoretical examination on a significantly low off-state current of a transistor using crystalline In-Ga-Zn-oxide”, in 19th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)",
          "text": "However, in the IGZO-FET, heavy holes strongly suppress tunneling current, and at most yoctoampere off-state current is estimated which is dominated by thermally excited holes.",
          "type": "quotation"
        },
        {
          "ref": "2016, Yoshinobu Asami, Motomu Kurata, Yutaka Okazaki, Eiji Higa, Daisuke Matsubayashi, Satoru Okamoto, Shinya Sasagawa, Tomoaki Moriwaka, Tetsuya Kakehata, Yuto Yakubo, “Properties of c-axis-aligned crystalline indium–gallium–zinc oxide field-effect transistors fabricated through a tapered-trench gate process”, in The Japan Society of Applied Physics, volume 55, number 4S",
          "text": "First, they are known to show an off-state current on the order of yoctoampere per micron (10⁻²⁴ A/µm) at room temperature (RT).",
          "type": "quotation"
        },
        {
          "ref": "2018, Jun Koyama, Semiconductor device including refresh circuit for memory cell (UA Patent 9,922,692)",
          "text": "For example, the off-state current per micrometer of the channel width at 85° C. is less than or equal to 100 yA (1 yA (yoctoampere) is 1×10⁻²⁴ A).",
          "type": "quotation"
        }
      ],
      "glosses": [
        "An SI unit of electrical current equal to 10⁻²⁴ amperes. Symbol: yA"
      ],
      "id": "en-yoctoampere-en-noun-ZwR3BoxR",
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          "metrology",
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          "electrical current",
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        [
          "yA",
          "yA"
        ]
      ],
      "raw_glosses": [
        "(metrology) An SI unit of electrical current equal to 10⁻²⁴ amperes. Symbol: yA"
      ],
      "synonyms": [
        {
          "word": "yoctoamp"
        },
        {
          "word": "yA"
        }
      ],
      "topics": [
        "metrology"
      ],
      "translations": [
        {
          "code": "fr",
          "lang": "French",
          "sense": "unit of electrical current",
          "tags": [
            "masculine"
          ],
          "word": "yoctoampère"
        }
      ]
    }
  ],
  "word": "yoctoampere"
}

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      "expansion": "yocto- + ampere",
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    }
  ],
  "etymology_text": "yocto- + ampere",
  "forms": [
    {
      "form": "yoctoamperes",
      "tags": [
        "plural"
      ]
    }
  ],
  "head_templates": [
    {
      "args": {},
      "expansion": "yoctoampere (plural yoctoamperes)",
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  "lang_code": "en",
  "pos": "noun",
  "senses": [
    {
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        "English terms prefixed with yocto-",
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        "en:Metrology",
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      "examples": [
        {
          "ref": "2012, Masakazu Murakami, Kiyoshi Kato, Ko Inada, Takanori Matsuzaki, Yasuyuki Takahashi, Shunpei Yamazaki, “Theoretical examination on a significantly low off-state current of a transistor using crystalline In-Ga-Zn-oxide”, in 19th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)",
          "text": "However, in the IGZO-FET, heavy holes strongly suppress tunneling current, and at most yoctoampere off-state current is estimated which is dominated by thermally excited holes.",
          "type": "quotation"
        },
        {
          "ref": "2016, Yoshinobu Asami, Motomu Kurata, Yutaka Okazaki, Eiji Higa, Daisuke Matsubayashi, Satoru Okamoto, Shinya Sasagawa, Tomoaki Moriwaka, Tetsuya Kakehata, Yuto Yakubo, “Properties of c-axis-aligned crystalline indium–gallium–zinc oxide field-effect transistors fabricated through a tapered-trench gate process”, in The Japan Society of Applied Physics, volume 55, number 4S",
          "text": "First, they are known to show an off-state current on the order of yoctoampere per micron (10⁻²⁴ A/µm) at room temperature (RT).",
          "type": "quotation"
        },
        {
          "ref": "2018, Jun Koyama, Semiconductor device including refresh circuit for memory cell (UA Patent 9,922,692)",
          "text": "For example, the off-state current per micrometer of the channel width at 85° C. is less than or equal to 100 yA (1 yA (yoctoampere) is 1×10⁻²⁴ A).",
          "type": "quotation"
        }
      ],
      "glosses": [
        "An SI unit of electrical current equal to 10⁻²⁴ amperes. Symbol: yA"
      ],
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          "electrical current",
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        [
          "yA",
          "yA"
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      "raw_glosses": [
        "(metrology) An SI unit of electrical current equal to 10⁻²⁴ amperes. Symbol: yA"
      ],
      "topics": [
        "metrology"
      ]
    }
  ],
  "synonyms": [
    {
      "word": "yoctoamp"
    },
    {
      "word": "yA"
    }
  ],
  "translations": [
    {
      "code": "fr",
      "lang": "French",
      "sense": "unit of electrical current",
      "tags": [
        "masculine"
      ],
      "word": "yoctoampère"
    }
  ],
  "word": "yoctoampere"
}