"backgated" meaning in All languages combined

{
  "etymology_templates": [
    {
      "args": {
        "1": "en",
        "2": "backgate",
        "3": "-ed",
        "id2": "having"
      },
      "expansion": "backgate + -ed",
      "name": "af"
    }
  ],
  "etymology_text": "From backgate + -ed.",
  "head_templates": [
    {
      "args": {
        "1": "-"
      },
      "expansion": "backgated (not comparable)",
      "name": "en-adj"
    }
  ],
  "lang": "English",
  "lang_code": "en",
  "pos": "adj",
  "senses": [
    {
      "categories": [
        {
          "kind": "other",
          "name": "English entries with incorrect language header",
          "parents": [
            "Entries with incorrect language header",
            "Entry maintenance"
          ],
          "source": "w"
        },
        {
          "kind": "other",
          "name": "English terms suffixed with -ed (having)",
          "parents": [],
          "source": "w"
        },
        {
          "kind": "other",
          "name": "Pages with 1 entry",
          "parents": [],
          "source": "w"
        },
        {
          "kind": "other",
          "name": "Pages with entries",
          "parents": [],
          "source": "w"
        }
      ],
      "examples": [
        {
          "ref": "2015, Tathagata Paul, Subhamoy Ghatak, Arindam Ghosh, “Percolative switching in transition metal dichalcogenide field-effect transistors at room temperature”, in arXiv:",
          "text": "With simultaneous measurement of channel conductivity and its slow time-dependent fluctuation (or noise) in ultra-thin WSe2 and MoS2 FETs on insulating SiO2 substrates, where noise arises from McWhorter-type carrier number fluctuations, we establish that the switching in conventional backgated TMDC FETs is a classical percolation transition in a medium of inhomogeneous carrier density distribution.",
          "type": "quote"
        }
      ],
      "glosses": [
        "Equipped with a backgate"
      ],
      "id": "en-backgated-en-adj-fLJ~jUkM",
      "links": [
        [
          "backgate",
          "backgate"
        ]
      ],
      "tags": [
        "not-comparable"
      ]
    }
  ],
  "word": "backgated"
}

{
  "etymology_templates": [
    {
      "args": {
        "1": "en",
        "2": "backgate",
        "3": "-ed",
        "id2": "having"
      },
      "expansion": "backgate + -ed",
      "name": "af"
    }
  ],
  "etymology_text": "From backgate + -ed.",
  "head_templates": [
    {
      "args": {
        "1": "-"
      },
      "expansion": "backgated (not comparable)",
      "name": "en-adj"
    }
  ],
  "lang": "English",
  "lang_code": "en",
  "pos": "adj",
  "senses": [
    {
      "categories": [
        "English adjectives",
        "English entries with incorrect language header",
        "English lemmas",
        "English terms suffixed with -ed (having)",
        "English terms with quotations",
        "English uncomparable adjectives",
        "Pages with 1 entry",
        "Pages with entries"
      ],
      "examples": [
        {
          "ref": "2015, Tathagata Paul, Subhamoy Ghatak, Arindam Ghosh, “Percolative switching in transition metal dichalcogenide field-effect transistors at room temperature”, in arXiv:",
          "text": "With simultaneous measurement of channel conductivity and its slow time-dependent fluctuation (or noise) in ultra-thin WSe2 and MoS2 FETs on insulating SiO2 substrates, where noise arises from McWhorter-type carrier number fluctuations, we establish that the switching in conventional backgated TMDC FETs is a classical percolation transition in a medium of inhomogeneous carrier density distribution.",
          "type": "quote"
        }
      ],
      "glosses": [
        "Equipped with a backgate"
      ],
      "links": [
        [
          "backgate",
          "backgate"
        ]
      ],
      "tags": [
        "not-comparable"
      ]
    }
  ],
  "word": "backgated"
}